Photonic integrated circuits: where are the limits?

نویسندگان

  • Meint Smit
  • Siang Oei
  • Fouad Karouta
  • Richard Nötzel
  • Joachim Wolter
  • Erwin Bente
  • Xaveer Leijtens
  • Jos van der Tol
  • Martin Hill
  • Harm Dorren
  • Djan Khoe
  • Hans Binsma
چکیده

The integration scale in Photonic Integrated Circuits will be pushed to VLSI-level in the coming decade. Key technologies for reduction of device dimensions are high resolution lithography and deep waveguide etching technology. In this paper developments in Photonic Integration are reviewed and the limits for reduction of device dimensions are discussed. ©2004 Optical Society of America OCIS codes: (130.3120) Integrated optics devices, (130.5990) Integrated Optics: Semiconductors Introduction. The title that the IPRA Programme Committee suggested for this presentation was: “Photonic integrated circuits with deeply etched waveguides”. Deep etching causes a strong lateral confinement of light. Deep etched waveguides can be narrower and, what is more important, they show much lower bending loss than shallow etched waveguides. Even with a very small radius (< 10 μm) they can be used for low-loss interconnection. This allows for a strong reduction of the size of interconnection circuits. Further, deep etched MMI-couplers and deep etched AWG’s, key components in Photonic Integrated Circuits, can be made much smaller than shallow etched ones. Deep etching seems to be the key to reduction of device dimensions and the question raises: where are the limits? This will be the subject of the present paper, and we changed the title accordingly. The dynamics of micro-electronic integration technology. The field of Information and Communication Technologies is showing a development speed which is unprecedented in history. Over a period of more than thirty years key features like processor speed and memory size are roughly doubling each 18 months, and experts believe that this development will continue in the coming decade. It is known as Moore’s law and enabled by the developement of micro-electronic integration technology. Due to this development a steadily increasing performance of components and systems can be offered at an essentially constant price, a development that we recognise in the fact that the price of our new PC does not differ much from what we paid three years earlier for the previous one. This dynamics has become a major driver for the ICT market, which would collapse without this steady innovation. Moore’s law in micro-photonics. If Photonics is going to play a substantial role in the ICT market it will have to follow the same dynamics. If not, it will rapidly loose the competition with micro-electronic solutions. The increase in functionality prescribed by Moore’s law can only be sustained by applying an integration technology that supports a steady reduction of circuit size and fabrication costs. As such Indium-Phosphide based integration technology is the most powerful technology because it supports the integration of almost all functions required in ICT applications. The question is whether it has the same potential as micro-electronic integration technology for reduction of device dimensions and fabrication costs over a longer period. To study that question we have put the development of Photonic IC’s in our own lab in a graph with the potential integration density in devices per square centimeter on the vertical axis. The open circles mark the first publication of a device or a circuit. It starts with the invention of the AWG in 1988 [1]. The next circle is the first InP-based Optical Add-drop Multiplexer (OADM) by Vreeburg in 1997 [2], a device that integrated a single AWG with four Mach-Zehnder switches on an area of 0.2 cm; 25 components per square centimeter. As a next step we developed a technology for reducing the size of our AWG’s using deep etching technology. This brought us the worlds most compact Optical Cross-Connect (OXC) [3]: a device with 4 AWG’s and 4 Mach-Zehnder switches on an area of 5 mm, i.e. an integration density of more than 100 components per square centimeter. Since then we succeeded in a further reduction of AWG-size close to the limits of conventional deep etched waveguide technology in InP: 250x350 μm [4]. The last circle in the graph is a photonic flip-flop, consisting of two deep-etched micro-ring lasers, that was recently published by Hill et al. [5]. This device, with dimensions of 20x40 μm, allows for integration of more than 1000 components per square centimeter, in principle. As can be seen these devices fit remarkably well to a straight line with a slope slightly larger than Moore’s law. If this is significant it confirms the observation that the dynamics of telecommunications is even faster than that of micro-electronics. IWB1

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Novel Design for Photonic Crystal Ring Resonators Based Optical Channel Drop Filter

Photonic crystal ring resonators (PCRRs) are traditional structures fordesigning optical channel drop filters. In this paper, Photonic crystal channel drop filter(CDFs) with a new configuration of ring resonator is presented. The structure is made ofa square lattice of silicon rods with the refractive index nsi=3. 4 which are perforated inair with refractive index nair=1. Calculations of band s...

متن کامل

Low Delay Time All Optical NAND, XNOR and OR Logic Gates Based on 2D Photonic Crystal Structure

Background and Objectives: Recently, photonic crystals have been considered as the basic structures for the realization of various optical devices for high speed optical communication. Methods: In this research, two dimensional photonic crystals are used for designing all optical logic gates. A photonic crystal structure with a triangular lattice is proposed for making NAND, XNOR, and OR optica...

متن کامل

Design of Photonic Crystal Polarization Splitter on InP Substrate

In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55mm wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...

متن کامل

Ultra-fast 1-bit comparator using nonlinear photonic crystalbased ring resonators

In this paper, a photonic crystal structure for comparing two bits has beenproposed. This structure includes four resonant rings and some nonlinear rods. Thenonlinear rods used inside the resonant rings were made of a doped glass whose linearand nonlinear refractive indices are 1.4 and 10-14 m2/W, respectively. Using Kerr effect,optical waves are guided toward the correc...

متن کامل

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90nm node

Articles you may be interested in Fully complementary metal-oxide-semiconductor compatible nanoplasmonic slot waveguides for silicon electronic photonic integrated circuits Appl. Compact models considering incomplete voltage swing in complementary metal oxide semiconductor circuits at ultralow voltages: A circuit perspective on limits of switching energy Monolithically integrated low-loss silic...

متن کامل

Towards Large-Scale Fast Reprogrammable SOA-Based Photonic Integrated Switch Circuits

Due to the exponentially increasing connectivity and bandwidth demand from the Internet, the most advanced examples of medium-scale fast reconfigurable photonic integrated switch circuits are offered by research carried out for dataand computer-communication applications, where network flexibility at a high speed and high connectivity are provided to suit network demand. Recently we have protot...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005